Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 10, Pages 3424-3429Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2279401
Keywords
High mobility; radio frequency (RF) sputtering; room temperature; thin-film transistor (TFT); zinc oxide (ZnO)
Funding
- NanoePrint
- EPSRC KTA project
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Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta2O5 high-k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm(2)/Vs, an ON/OFF ratio of > 10(5), and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed.
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