High-Performance Transparent AZO TFTs Fabricated on Glass Substrate

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) (W/L = 100 or 10 mu m) are successfully fabricated on glass substrate. All the process temperature is below 100 degrees C. For V-G = -2 to 5 V, the TFTs using sputtering deposit AZO layer at room temperature as channel layer exhibits excellent properties, such as a saturation mobility mu(s) of 285 cm(2)/V.s, a linear field effect mobility mu(l) of 143 cm(2)/V.s, a threshold voltage Vth of 0.9 V, a steep subthreshold swing of 108 mV/decade, a low off-state current value I-off of 5 x 10(-13) A, a high ON/OFF ratio of 2 x 10(9) and a high transmittance of 82.5%. The results highlight that excellent device performance can be realized in AZO TFTs. Note that this is the best performance of AZO TFT ever reported.