Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 8, Pages 2537-2541Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2265326
Keywords
Amorphous indium-gallium-zincoxide thin-film transistors (a-IGZO TFTs); high-pressure annealing; hydrogenation
Funding
- Ministry of Education, Science, and Technology of Korea through the World Class University
- Gwangju Institute of Science and Technology [R3110026]
- Ministry of Knowledge Economy, Korea Institute of Advancement of Technology [R0000499]
- NRF [20120005714]
- Korea Evaluation Institute of Industrial Technology (KEIT) [R0000448] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0017603] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260 degrees C, 270 degrees C, and 280 degrees C. The HPHA effectively increases the carrier concentration and the Hall mobility up to similar to 10(19) cm(-3) and similar to 6.4 cm(2)/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 degrees C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm(2)/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an I-ON/I-OFF of 2.0 x 10(6).
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