Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 4, Pages 1384-1389Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2248157
Keywords
Conductive filament; hopping-percolation model; resistive switching RAM; retention
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The retention model of a bipolar ReRAM considering the percolative paths in a conductive filament is proposed. We demonstrate, for the first time, that the control of oxygen vacancy concentration in a conductive filament is the key for ensuring data retention including tail bits. To improve the retention property under low-current operation, the size of the conductive filament must be scaled down while keeping the density of oxygen vacancy high enough. Based on this concept, we demonstrate both low-current operation and sufficient retention results exceeding 500 h at 150 degrees C, which correspond to more than 10 years at 85 degrees C.
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