UV Enhanced Indium-Doped ZnO Nanorod Field Emitter

In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V/mu m. The field enhancement factors, beta, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.