Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 11, Pages 3901-3906Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2280910
Keywords
Field emission; hydrothermal; indium-doped ZnO nanorods
Funding
- Center for Frontier Materials and Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center
- National Cheng Kung University
- National Science Council of Taiwan [NSC 101-2221-E-150-043]
- National Formosa University Research and Services Headquarters
- Common Laboratory for Micro and Nano Science and Technology of the National Formosa University
Ask authors/readers for more resources
In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V/mu m. The field enhancement factors, beta, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available