Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 10, Pages 3157-3165Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2272700
Keywords
AlGaN/GaN high electron mobility transistor (HEMT); AlInN/GaN HEMT; gate leakage current; leakage current modeling; parameter extraction
Funding
- Department of Science and Technology, Government of India
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The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I-G-V-G) characteristics. The reverse bias gate current of AlInN/GaN HEMTs is decomposed into three distinct components, which are thermionic emission (TE), Poole-Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling. The electric field across the barrier in AlGaN/GaN HEMTs is not sufficient to support FN tunneling. Hence, only TE and PF emission is observed in AlGaN/GaN HEMTs. In both sets of devices, however, an additional trap-assisted tunneling component of current is observed at low reverse bias. A model to describe the experimental I-G-V-G characteristics is proposed and the procedure to extract the associated parameters is described. The model follows the experimental gate leakage current closely over a wide range of bias and temperature for both AlGaN/GaN and AlInN/GaN HEMTs.
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