Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 12, Pages 3327-3333Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2216535
Keywords
Dispersion; dynamic I-V analysis (DIVA); HEMT; pulse IV
Funding
- U.K. Engineering and Physical Sciences Research Council [EP/I033165/1]
- Engineering and Physical Sciences Research Council [EP/I033165/1] Funding Source: researchfish
- EPSRC [EP/I033165/1] Funding Source: UKRI
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The bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction field-effect transistors is studied in drift diffusion simulations, distinguishing between acceptor traps situated in the top and the bottom half of the bandgap, with Fe and C used as specific examples. It is shown that Fe doping results in an inherent but relatively minor contribution to dispersion under pulse conditions. This simulation is in reasonable quantitative agreement with double pulse experiments. Simulations using deep-level intrinsic growth defects produced a similar result. By contrast, carbon can induce a strong CC which is dependent on doping density. The difference is attributed to whether the trap levels, whether intrinsic or extrinsic dopants, result in a resistive n-type buffer or a p-type floating buffer with bias-dependent depletion regions. This insight provides a key design concept for compensation schemes needed to ensure semi-insulating buffer doping for either RF or power applications.
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