Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 9, Pages 2461-2467Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2202319
Keywords
Bipolar switching; memory modeling; Resistive-switching random access memory (RRAM); transition metal oxide
Funding
- Intel [55887]
- Fondazione Cariplo [2010-0500]
Ask authors/readers for more resources
Resistive-switching random access memory (RRAM) based on the formation and the dissolution of a conductive filament (CF) through insulating materials, e. g., transition metal oxides, may find applications as novel memory and logic devices. Understanding the resistive-switching mechanism is essential for predicting and controlling the scaling and reliability performances of the RRAM. This paper addresses the set/reset characteristics of RRAM devices based on HfOx. The set process is analyzed as a function of the initial high-resistance state and of the current compliance. The reset process is studied as a function of the initial low-resistance state. Finally, the intermediate set states, obtained by set at variable compliance current, and reset states, obtained by reset at variable stopping voltage, are characterized with respect to their reset voltage, allowing for a microscopic interpretation of intermediate states in terms of different filament morphologies.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available