Related references
Note: Only part of the references are listed.On-Off Charge-Voltage Characteristics and Dopant Number Fluctuation Effects in Junctionless Double-Gate MOSFETs
Yuan Taur et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Effect of Band-to-Band Tunneling on Junctionless Transistors
Suresh Gundapaneni et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Physical Model of the Junctionless UTB SOI-FET
Elena Gnani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
A. Martinez et al.
SOLID-STATE ELECTRONICS (2012)
Electrical characteristics of 20-nm junctionless Si nanowire transistors
Chan-Hoon Park et al.
SOLID-STATE ELECTRONICS (2012)
Cryogenic Operation of Junctionless Nanowire Transistors
Michelly de Souza et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors
Juan P. Duarte et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors
Sung-Jin Choi et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Theory of the Junctionless Nanowire FET
Elena Gnani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors
Jean-Michel Sallese et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Junctionless Multiple-Gate Transistors for Analog Applications
Rodrigo Trevisoli Doria et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Threshold voltage in junctionless nanowire transistors
Renan Doria Trevisoli et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2011)
Junctionless Nanowire Transistor (JNT): Properties and design guidelines
J. P. Colinge et al.
SOLID-STATE ELECTRONICS (2011)
A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs
N. Lakhdar et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2011)
Impact of the Series Resistance in the I-V Characteristics of nMOS Junctionless Nanowire Transistors
R. T. Doria et al.
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 (2011)
High-Temperature Performance of Silicon Junctionless MOSFETs
Chi-Woo Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Nanowire transistors without junctions
Jean-Pierre Colinge et al.
NATURE NANOTECHNOLOGY (2010)
Performance estimation of junctionless multigate transistors
Chi-Woo Lee et al.
SOLID-STATE ELECTRONICS (2010)
Junctionless multigate field-effect transistor
Chi-Woo Lee et al.
APPLIED PHYSICS LETTERS (2009)
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
Bart Soree et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2008)
Device modeling at cryogenic temperatures: Effects of incomplete ionization
Akin Akturk et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation
P. P. Altermatt et al.
JOURNAL OF APPLIED PHYSICS (2006)
A simulation model for the density of states and for incomplete ionization in crystalline silicon.: II.: Investigation of Si:As and Si:B and usage in device simulation
P. P. Altermatt et al.
JOURNAL OF APPLIED PHYSICS (2006)
Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom
A Ortiz-Conde et al.
SOLID-STATE ELECTRONICS (2003)
Pi-gate SOI MOSFET
JT Park et al.
IEEE ELECTRON DEVICE LETTERS (2001)
Share Paper
