Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 3, Pages 863-866Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2181392
Keywords
Double-gate (DG) FET; junctionless MOSFET; MOSFET; semiconductor device modeling
Funding
- Research Collaboration Project
- Taiwan Semiconductor Manufacturing Company, Ltd.
Ask authors/readers for more resources
Junctionless double-gate (DG) MOSFETs are assessed by analyzing the on-off characteristics of the mobile charge density as a function of gate voltage. Compared with undoped DG MOSFETs, junctionless MOSFETs have an inferior on-off charge performance with more degradation at higher doping. The results also indicate a major issue: dopant number fluctuations in minimum width junctionless MOSFETs. A first-order analytic expression shows that the one-sigma threshold fluctuation is proportional to the square root of doping concentration. Inclusion of the quantum effect makes no significant difference to the results.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available