Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 1, Pages 87-93Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2172613
Keywords
Aluminum thermomigration; degenerate boron doping; silicon micromechanical resonators; temperature compensation
Funding
- Integrated Device Technology (IDT), Inc.
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This paper demonstrates the dependence of temperature coefficient of frequency (TCF) of silicon micromechanical resonators on charge carrier concentration. TCF compensation is demonstrated by degenerate doping of silicon bulk acoustic resonators (SiBARs) using both boron and aluminum dopants. The native TCF of -33 ppm/degrees C for silicon resistivity of > 10(3) Omega . cm is shown to reduce to -1.5 ppm/degrees C at ultralow resistivity of similar to 10(-4) Omega . cm using relatively slow diffusion-based boron doping. However, the faster thermomigration-based aluminum doping offers TCF reduction to as low as -2.7 ppm/degrees C with much reduced processing time. A very high Q of 28 000 at 100 MHz is measured for a temperature-compensated SiBAR.
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