Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide (MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared with those of the silicon transistors if a thin high-kappa gate insulator is used. This makes monolayer MX2 promising 2-D materials for future nanoelectronic device applications.