A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

In this brief, we present a physics-based analytical model for 2-D electron gas density n(s) in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E-f and n(s). The model is developed by considering the variation of E-f, the first subband E-0, the second subband E-1, and n(s) with applied gate voltage V-g. The proposed model is in very good agreement with numerical calculations.