Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 11, Pages 3970-3975Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2164408
Keywords
Atomic layer deposition (ALD); gallium nitride; heterojunction; white-light-emitting diode (LED); zinc oxide
Funding
- National Science Council of Taiwan [NSC98-2112-M-002-018-MY2, NSC100-3113-E002-011]
Ask authors/readers for more resources
White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available