Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 12, Pages 4407-4413Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2167234
Keywords
Ammonia sensor; crystalline; grain size; indium tin oxide (ITO); oxygen deficiency; radio-frequency sputtering
Funding
- National Science Council of the Republic of China [NSC-97-2221-E-006-237-MY3]
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Indium tin oxide (ITO) thin-film-based ammonia sensors on sapphire and quartz substrates, fabricated by radio-frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH3 sensing properties of ITO thin films deposited on a quartz substrate, with a substrate temperature T-s of 100 degrees C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150 degrees C, are observed. This performance is superior to other previously reported ITO thin-film-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high-performance ammonia sensing applications.
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