Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 11, Pages 3933-3939Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2164615
Keywords
Amorphous carbon (a-C); carbon nanotube (CNT); complementary resistive switching; nonvolatile memory; resistive random access memory (RRAM); resistive switching memory
Funding
- Stanford Nonvolatile Memory Technology Research Initiative
- Stanford Graduate Fellowship
- O. G. Villard Engineering Fund at Stanford
- Research Grant Council of Hong Kong Government [HKUST 611307]
- Berkeley Sensor and Actuator Center
- World Class University
- National Research Foundation of Korea [R31-2011-000-10022-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.
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