Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 9, Pages 3116-3123Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2159010
Keywords
Charge-trap (CT) memories; Fowler-Nordheim (FN) tunneling; gate-all-around (GAA) memories; semiconductor device modeling
Funding
- European Commission [214431]
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We present a detailed semi-analytical investigation of the transient dynamics of gate-all-around (GAA) charge-trap memories. To this aim, the Poisson equation is solved in cylindrical coordinates, and a modification of the well-known Fowler-Nordheim formula is proposed for tunneling through cylindrical dielectric layers. Analytical results are validated by experimental data on devices with different gate stack compositions, considering a quite extended range of gate biases and times. Finally, the model is used for a parametric analysis of the GAA cell, highlighting the effect of device curvature on both program/erase and retention.
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