Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 3, Pages 704-708Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2099121
Keywords
AlGaN/GaN high electron mobility transistor (HEMT); drain-induced barrier lowering (DIBL); Ga-polar; N-polar; short-channel effects; simulation; technology computer-aided design (TCAD)
Funding
- Office of Naval Research
- Air Force Research Laboratory
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We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.
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