☆ 4.6 Article

Characteristics of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

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Characteristics of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

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