Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 1, Pages 26-41Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2033769
Keywords
p-type ZnO; zinc oxide; ZnO-based light-emitting diodes (LEDs)
Funding
- Ministry of Knowledge Economy
- Korea Science and Engineering Foundation, Korean government [R17-2007-07801000-0]
- Gwangju Institute of Science and Technology (GIST), Ministry of Education, Science and Technology of Korea [R31-2008-000-10026-0]
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ZnO has attracted considerable attention for optical device applications because of several potential advantages over GaN, such as commercial availability of bulk single crystals and a larger exciton binding energy (similar to 60 meV compared with similar to 25 meV for GaN). Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in light-emitting diodes (LEDs). In this paper, we summarize recent progress in ZnO-based LEDs. Physical and electrical properties, bandgap engineering, and growth of n- and p-type ZnO thin films are also reviewed.
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