Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 11, Pages 2957-2963Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2066130
Keywords
Charge carrier lifetime; photovoltaic cell materials; photovoltaic cell measurements; thin-film devices
Funding
- U.S. Department of Energy [DOE-AC36-08GO28308]
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The relationship between lifetime measured by time-resolved photoluminescence on bare Cu(In, Ga)Se-2 films and subsequent device performance is examined. Devices and films from both the laboratory and a 40-MW manufacturing line are examined. A correlation between the device voltage and lifetime is demonstrated. The effects of the measured band gap and carrier density are discussed. A method to account for the effects of varying band-gap and carrier density profiles, without requiring computer modeling, is presented. Results are compared with fundamental calculations.
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