Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 1, Pages 195-200Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2035540
Keywords
Contact resistance; device simulation; organic thin-film transistor (OTFT); planar structure; staggered structure
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A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.
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