Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 10, Pages 2564-2571Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2061771
Keywords
III-V semiconductors; simulation; solar cell; tunnel diode
Funding
- Spanish Ministerio de Educacion y Ciencia [CSD2006-004]
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Multijunction solar cells (MJCs) based on III-V semiconductors constitute the state-of-the-art approach for high-efficiency solar energy conversion. These devices, consisting of a stack of various solar cells, are interconnected by tunnel diodes. Reliable simulations of the tunnel diode behavior are still a challenge for solar cell applications. In this paper, a complete description of the model implemented in Silvaco ATLAS is shown, demonstrating the importance of local and nonlocal trap-assisted tunneling. We also explain how the measured doping profile and the metalization-induced series resistance influence the behavior of the tunnel diodes. Finally, we detail the different components of the series resistance and show that this can help extract the experimental voltage drop experienced by an MJC due to the tunnel junction. The value of this intrinsic voltage is important for achieving high efficiencies at concentrations near 1000 suns.
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