Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 2, Pages 406-414Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2037365
Keywords
Ballistic transport; bandstructure; first-principles calculation; graphene nanoribbon (GNR); nanotransistors; silicon nanowire (SNW)
Funding
- Semiconductor Technology Academic Research Center
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In this paper, we investigate the performance potentials of silicon nanowire (SNW) and semiconducting graphene nanoribbon (GNR) MOSFETs by using first-principles bandstructures and ballistic current estimation based on the top-of-the-barrier model. As a result, we found that SNW-MOSFETs display a strong orientation dependence via the atomistic bandstructure effects, and [110]-oriented SNW-MOSFETs provide smaller intrinsic device delays than Si ultrathin-body MOSFETs when the wire size is scaled smaller than 3 nm. Furthermore, GNR-MOSFETs are found to exhibit promising device performance if the ribbon width is designed to be larger than a few nanometers and a finite band gap can be established.
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