Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 8, Pages 1838-1845Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2010.2050963
Keywords
Amorphous semiconductors; chalcogenide materials; nonvolatile memory; oscillations; phase-change memory (PCM); recovery
Funding
- Intel [34523]
- Italian Minister for University and Research [FIRB-RBIP06YSJJ]
Ask authors/readers for more resources
Phase-change memory (PCM) relies not only on phase transitions between the two structures of the chalcogenide materials but also on electronic switching in the amorphous material between OFF and ON conductive states and vice versa. Transient effects associated to both transitions, like the delay time for threshold switching, the switching time, and the recovery time for the ON to OFF transition, play a fundamental role in the operation of the PCM device, namely program, erase, and readout processes. This paper focuses on the transient modeling and simulation of the recovery effect in PCM cells. After providing physical insight into the recovery process, we present a numerical model able to account for the transient recovery of threshold voltage V(T) and of resistance R after the ON-OFF transition. The impact of recovery effect on program-verify loops used for accurate positioning of R is discussed. The combination of switching and recovery effects is shown to give rise to relaxation oscillations under suitable bias conditions, and the transient model for switching and recovery is applied to describe and predict oscillation behavior of PCM.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available