Integrated Voltage Reference Generator for GaN Smart Power Chip Technology

GaN smart power chip technology has been realized a GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral for mixed-signal functional blocks. In particular, this presents the imperative analog functional block-voltage generator for smart power applications with wide-temperature-range stability. The circuit is capable of proper functions within a wide temperature range from room temperature up 250 degrees C, illustrating the unique advantage of the wide-bandgap in high-temperature operation. The voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky and the devices were operated in the subthreshold regime obtain low power consumption. The voltage reference generator an average drift of less than 0.5mV/degrees C and can be used a reference voltage in various biasing and sensing circuits.