Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 12, Pages 3049-3054Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2032597
Keywords
Oxygen vacancy; resistive random access memory (RRAM); resistive switching; TiOx
Funding
- Center for Nanoscale Mechatronics and Manufacturing [08K1401-00210]
- Ministry of Education, Science and Technology of Korea
- National Research Foundation of Korea [과C6A1611, 14-2008-01-001-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiOx/TiO2/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron-microscope energy-dispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.
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