Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 8, Pages 1624-1630Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2022700
Keywords
Floating gate (FG); low-frequency noise (LFN); NAND Flash memory; program/erase (P/E) cycling; random telegraph noise (RTN); threshold voltage fluctuation; 1/f noise
Funding
- Ministry of Knowledge Economy
- Hynix Semiconductor, Inc.
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We have characterized low-frequency noise (LFN) such as 1/f noise and random telegraph noise (RTN) in a NAND Flash memory cell string for the first time and shown its fundamental properties. The NAND Flash memory cells showed specific LFN characteristics under various conditions such as bit-line bias, word-line bias of a selected cell, and pass bias of the unselected cells in the NAND string. Also, LFN was investigated with the program/erase (P/E) cycling of a cell or all cells in a string, and maximum threshold voltage fluctuation of several tens of millivolts after similar to 100 000 cycles at the 70-nm technology node was shown. Finally, we predicted the effects of LFN in sub-70-nm NAND Flash memories.
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