Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 11, Pages 2556-2562Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2030601
Keywords
Charge-carrier multiplication (CCM); high sensitivity; high speed; in situ storage image sensor (ISIS)
Funding
- Development of Systems and Technology for Advanced Measurement and Analysis
- Japan Science and Technology Agency (JST-SENTAN)
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In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.
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