Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 11, Pages 2825-2832Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2031019
Keywords
Avalanche; dynamic avalanche; power diodes; reverse recovery
Ask authors/readers for more resources
The effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field. A density of free carriers higher than the background doping will easily occur in space-charge regions during reverse recovery of high-voltage silicon devices. As a result, a high electric-field strength combined with avalanche generation occurs at the p-n junction. However, if a second region with high electric-field strength arises at the nn(+)-junction, the situation can become critical. If the second electric-field peak can be suppressed, it is possible to make diodes that are very rugged and show a significantly improved soft-recovery behavior.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available