Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 3, Pages 377-382Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2011677
Keywords
Au and Ni; double-stacked nanocrystal (DSNC); energy band lineup; flash memory; nanocrystal (NC); nanocrystal floating-gate memory (NFGM); nonvolatile memory (NVM); program/erase (P/E) speed; retention time
Funding
- National Research Foundation of Korea [과C6A1611] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A double-stacked nanocrystal (DSNC) Hash memory is presented for improvement of both program/erase speed and data retention time. Four combinations of nickel (Ni) and gold (An) (Ni/Ni, Au/Au, Ni/Au, and Au/Ni) are used as charge storage DSNC materials and are compared from the perspective of memory performance, Through experimental results for P/E efficiency and retention time, the optimized energy band lineup for faster P/E, and longer charge retention is presented. A combination of a deep potential well at the top and a shallow potential well at the bottom exhibits optimized performance in P/E, and this combination also shows the longest data retention characteristics.
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