Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 8, Pages 1857-1863Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.926638
Keywords
high voltage; junction barrier Schottky (JBS); model; Schottky rectifier; 4H-SiC
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We develop a new analytical model for the junction barrier Schottky (JBS) rectifier and apply it to high-voltage 4H-SiC JBS rectifiers. This model uses a novel method to approximate the electric field at the Schottky contact, which is together with the Fowler-Nordheim tunneling equation to accurately calculate the reverse leakage current of a high-voltage 4H-SiC JBS rectifier. The forward on-resistance of a high-voltage 4H-SiC JBS rectifier consists of several components, which are dominated by the spreading resistances in the drift layer. Moreover, this model has been verified by comparing the simulation and experimental results, and they are shown to be in good agreement.
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