Analytical HFET I-V model in presence of current collapse

A compact analytical model of short-channel AlGaN/GaN HEMTs in the presence of a current collapse is presented. The model is based on an experimentally established trapping mechanism at the gate edges and relies on significant differences between the characteristic carrier capture-escape times and typical RF signal periods. For the first time, we implement the theory describing electric field distributions in the HEMT gate-to-drain spacing region, with and without trapped charge distributions. By con sequently accounting for velocity saturation effects in gated and trapped regions of the device, the presented model shows good agreement with the experimental data. The model uses a minimal number of fitting parameters, most of which are physical parameters describing velocity-field dependence of the carriers.