Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 11, Pages 2968-2976Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2005164
Keywords
Effective mobility; nonequilibrium Green's functions (NEGFs); quasi-ballistic transport; silicon nanowire (Si-NW); surface roughness (SR)
Funding
- EU Marie-Curie Action EDITH [MEST-CT-2004-504195]
- PNANO 2007 program of the Agence Nationale de la Recherche (QUANTAMONDE)
Ask authors/readers for more resources
Lateral size effects on surface-roughness-limited mobility in silicon-nanowire FETs are analyzed by means of a full-quantum 3-D self-consistent simulation. A statistical analysis Is carried out by considering different realizations of the potential roughness at the Si-SiO2 interfaces. Nanowires with lateral section varying from 3 x 3 to 7 x 7 nm(2) are considered. Effective mobility is computed by evaluating the electron density in a reduced channel region to eliminate parasitic effects from contacts. It is found that transport in wires with the smallest section is dominated by scattering due to potential fluctuations, resulting in a larger standard deviation of the effective mobility, whereas it is dominated by transverse-mode coupling in wires with larger section, resulting in a stronger influence of surface roughness at high gate voltages.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available