Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 11, Pages 3001-3011Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2005180
Keywords
High electron mobility; nanocomposite thin-film transistors (TFTs); nanowires (NWs); organic semiconductors; tetrapods; Zinc Oxide (ZnO)
Funding
- National Science Council Taiwan [NSC-095-SAF-1-564-025-TMS]
- Engineering and Physical Sciences Research Council [EP/F035411/1, EP/D052939/1] Funding Source: researchfish
- EPSRC [EP/F035411/1, EP/D052939/1] Funding Source: UKRI
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This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.
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