Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 55, Issue 10, Pages 2785-2789Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2008.2003052
Keywords
Abrupt switching; dynamic random access memory (DRAM); electrostatic microswitch; endurance; microelectro-mechanical systems (MEMS); nonvolatile memory; retention
Funding
- National Research Foundation of Korea [과C6A1610] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We proposed and demonstrated a mechanically operated random access memory (MORAM) based on an electrostatically actuated metallic microswitch for nonvolatile memory applications. The metallic microswitch-based MORAM successfully showed program and erase operations, wherein the microswitch had an essentially zero off current, an abrupt switching with less than 1 mV/dec, and an on/off current ratio over 10(7), and its stored charge was investigated with the metal-oxide-semiconductor (MOS) capacitor. Moreover, first reported were an endurance of up to 10(5) cycles in air ambient and a retention time of more than 10(4) s in vacuum ambient.
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