Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 13, Issue 1, Pages 252-257Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2012.2237404
Keywords
Atomic force microscopy (AFM); resistive switching (RS); SCLC; ZrN
Funding
- Leading Foreign Research Institute Recruitment Program [2012-00109]
- Basic Science Research Program through the National Research Foundation of Korea [2012R1A1A2043542]
- Ministry of Education, Science and Technology
- National Research Foundation of Korea [2012R1A1A2043542, 2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10(4). The device also showed an endurance of > 10(9) cycles and a retention time of > 10(4) s at 85 degrees C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device.
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