Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 8, Issue 3, Pages 590-599Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2008.2002359
Keywords
Interlayer dielectric (ILD) cracking; metallization failure; power cycling; short circuit; temperature cycling
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In this paper, a novel mechanism is shown to cause the failure evolution in a metallization system under fast temperature cycle stress. The failure evolution is triggered by the lateral temperature distribution across the device, which causes an accumulating plastic deformation of the metallization. The root cause for the deformation emerges at the position of the maximum gradient in temperature.
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