Journal
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
Volume 33, Issue 1, Pages 3-9Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAPT.2009.2037608
Keywords
3-D packaging; system in packaging; through silicon via
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Portable electronic products demand multifunctional module comprising of digital, radio frequency and memory functions. Through silicon via (TSV) technology provides a means of implementing complex, multifunctional integration with a higher packing density for a system in package. A 3-D silicon module with TSV has been developed in this paper. Thermo-mechanical analysis has been performed and TSV interconnect design is optimized. Multiple chips representing different functional circuits are assembled using wirebond and flip chip interconnection methods. Silicon carrier is fabricated using via-first approach, the barrier copper via is exposed by the backgrinding process. A two-stack silicon module is developed and module fabrication details are given in this paper. The module reliability has been evaluated under temperature cycling (-40/125 degrees C) and drop test.
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