4.7 Article

Three Fingerprints of Memristor

Journal

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2013.2256171

Keywords

Generalized memristor; ideal memristor; lobe area; memristive device; memristor; non-transversal loop; pinched hysteresis loop; transversal loop

Funding

  1. US Air Force [FA9550-10-1-0290, FA9550-13-1-0136]

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This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a pinched hysteresis loop in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.

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