Journal
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Volume 23, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2012.2235113
Keywords
CeO2 buffer layer; IBAD; in-plane misorientation angle; self-epitaxy; YBCO coated conductor
Funding
- New Energy and Industrial Technology Development Organization (NEDO)
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To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.
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