Journal
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Volume 19, Issue 3, Pages 361-366Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2009.2018846
Keywords
Applied superconductivity; NbN superconducting films; quantum detection; single photon detector; superconducting nanowire single photon detectors (SNSPD); superconducting optoelectronics
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We present our semiempirical approach for modeling Dark Count Rate (DCR) and Quantum Efficiency (QE) of current biased Superconducting Nanowire Single Photon Detectors (SNSPDs). Using the qualitative outcomes of the present SNSPD models, we define new quantitative parameters including hotspot lifetime, resistive barrier generation rates and detector dead time to mathematically integrate different physical phenomena of the device into a unified model. The capability of the model to predict the outcomes of the measurements is demonstrated by reporting the details of the supporting experiments and showing a good agreement between simulation and experimental results.
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