Journal
IEEE SENSORS JOURNAL
Volume 13, Issue 6, Pages 2322-2328Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2013.2253603
Keywords
CMOS SPAD; passive quenching; single photon avalanche diode (SPAD)
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An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.
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