Journal
IEEE SENSORS JOURNAL
Volume 13, Issue 1, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2012.2225831
Keywords
Asymmetry; detection; high-electron-mobility transistor (HEMT); imaging; plasmon; sensing; terahertz
Funding
- JST-ANR Japan-France International Strategic Collaborative Research Program Wireless Communication Using Terahertz Plasmonic Nano-ICT Devices (WITH)
- JSPS-RFBR Japan-Russian Joint Research Program
- Russian Foundation for Basic Research [10-02-93120, 11-02-92101, 12-02-93105]
- Russian Academy of Sciences Program Technological Fundamentals of Nanotechnology and Nanomaterials
- Government of the Russian Federation [11.G34.31.0030]
- Ministry of Science and Innovation of Spain [PPT-120000-20094, TEC-2008-02281]
- Ramon y Cajal Program
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This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighly-sensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.
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