Journal
IEEE SENSORS JOURNAL
Volume 11, Issue 4, Pages 999-1003Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2010.2062176
Keywords
beta-Ga2O3; furnace oxidation; GaN; ultraviolet (UV); photodetector (PD)
Funding
- Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan
- Advanced Optoelectronic Technology Center, NCKU
- Ministry of Education, Taiwan
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [98-D0204-6]
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The authors report the growth of beta-Ga2O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind beta-Ga2O3 photodetector (PD). For the PD with an active area of 4.4 mm(2) and 5-V applied bias, it was found that measured current was only 1.39 x 10(-10) A in the dark and increased to 2.03 x 10(-5) A when illuminated with 260-nm ultraviolet (UV) light (41.27 mu W/cm(2)). It was also found that the fabricated PD exhibits an extremely large deep-UV- to-visible rejection ratio.
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