Journal
IEEE SENSORS JOURNAL
Volume 11, Issue 4, Pages 1078-1083Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2010.2058846
Keywords
Avalanche photodiodes (APDs); CMOS image sensor; integrated photodetector; silicon avalanche photodiode (SAPD); silicon photodetector; single-photon detectors; single-photon avalanche detectors (SPADs); time-domain (TD) image sensor
Funding
- Natural Science and Engineering Research Council of Canada
- Raymond Moore OGSST of Canada
- KACST of Saudi Arabia
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Avalanche photodiodes used in Geiger mode as single-photon counters have become very attractive imaging tools. High-speed single-photon imaging can be used in very low-light-level applications such as surveillance and security imaging, quantum computing, and biomedical imaging including bioluminescence and fluorescence lifetime imaging. However, a typical avalanche-based single-photon detector cannot offer the high dynamic range that is needed for many biomedical and surveillance applications. In this paper, we show how a single-photon detector can be used in time domain for high-dynamic-range applications. We also discuss novel techniques to implement the time-domain single-photon imager in mainstream deep-submicrometer CMOS technology. The designed imager offers high dynamic range and high sensitivity, while maintaining high-speed operation and low cost.
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