Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection

Silicon carbide (SiC) separate absorption multiplication region avalanche photodiodes (SAM-APDs) for UV detection in harsh environment applications were designed and fabricated. The devices were intentionally designed to operate under nonreach-through conditions in order to eliminate field-induced leakage current. The gain of 2500 and quantum efficiency of similar to 45% at room temperature were achieved at the wavelength of 290-300 turn for a packaged device with an active area of 1 x 1 mm(2). The temperature dependency of the current-voltage characteristics and responsivity was examined in the temperature range front room temperature to 230 degrees C.