Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 26, Issue 13, Pages 1352-1355Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2014.2323702
Keywords
Thermo-optic modulator; silicon photonics; mid-infrared; optoelectronic devices; photonics
Funding
- U.K. Engineering and Physical Sciences Research Council through the Migration Project
- Royal Society through the Goran Mashanovich's Royal Society Research Fellowship
- Engineering and Physical Sciences Research Council [EP/L00044X/1, EP/H051767/2, EP/L01162X/1] Funding Source: researchfish
- EPSRC [EP/L00044X/1, EP/L01162X/1, EP/H051767/2] Funding Source: UKRI
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We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 mu m. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.
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