Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 26, Issue 1, Pages 11-13Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2013.2287502
Keywords
Quantum dots; optoelectronic devices; semiconductor lasers
Funding
- Israel Science Foundation
- project DELIGHT of the European Commission
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We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 mu m. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm(-1) per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.
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