Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 11, Pages 906-908Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2190396
Keywords
Characteristic temperature (T-0); laser diode; quantum-dot (QD); submonolayer (SML) growth
Funding
- Research Center German Research Foundation (DFG) [SFB 787]
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Temperature-dependent lasing characteristics of transverse single-mode GaAs-based InAs submonolayer (SML) quantum-dot (QD) lasers are investigated. The SML QD lasers, when operated under continuous wave (cw) conditions up to 65 degrees C, exhibit a high characteristic temperature (T-0) of around 101 K. The temperature-dependent net modal gain is also studied using the Hakki-Paoli method, yielding a narrow gain spectrum width of 15.6 meV at 20 degrees C where the peak gain is 9.6 cm(-1). The lasers exhibit a low loss of -6 to -9 cm(-1) in the temperature range of 15 degrees C to 65 degrees C.
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